We have been utilizing the techniques listed in this page for analyzing defects, extremely low concentration of impurities in ultra-high purity materials for microelectronics, and nanoscale features and heterostructures to allow the development of new devices, such as solar cells, quantum dot arrays, nanosensors... Aside from the conventional analytical techniques, nanoprobes specialized in the characterization of semiconductor nanomaterials and devices received much of our attention, as they allow measuring a set of time resolved or energy resolved properties at nanoscale. Of particular importance are a set of Near field Optical Scanning Microscopy (NSOM) based scanning and spectroscopic techniques. We have modified NSOM to explore the dynamics of carriers, or effect of local strain on the electronic properties in low dimension semiconductor materials, or piezolectricity in PVDF or NKBT,... Lifetime is measured in NSOM based pump-probe system. We could analyze charge carrier recombination processes along with local strains at the sub-micron and deca-nanometer scales. The new added functionalities to NSOM are extremely important for deciphering, for instance, the complex growth of nanomaterials, mechanisms of defect nucleation and growth, the physics underlying multi-photon absorption mechanism, the generation of charge carriers and the recombination and trapping of carriers, the involvement of particles and quasi-particles during optical and electronic transitions. Besides, we have nicely combined several among the known contact nanoprobe modes to get correlated data on single nanofeatures found in the materials we have grown.

If you are interested in collaboration on nanomaterial and device characterization using the listed techniques, This email address is being protected from spambots. You need JavaScript enabled to view it.This email address is being protected from spambots. You need JavaScript enabled to view it.

 

Continue reading,1.f.01 Experimental Techniques